| PART |
Description |
Maker |
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET 350 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| NX3008CBKS NX3008CBKS-15 |
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
|
NXP Semiconductors
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| T7300135 T7300145 T7300155 T7300235 T7300245 T7300 |
Phase Control SCR (350-550 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（350-550安培平均100-2200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| HGTP14N40F3VL |
19 A, 350 V, N-CHANNEL IGBT, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| FDMC7570S |
25V N-Channel Power Trench® SyncFET™; 8-Power-33; Tape and Reel
N-Channel Power Trench垄莽 SyncFET 25 V, 40 A, 2 m楼?
N-Channel Power Trench? SyncFET 25 V, 40 A, 2 mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFU321 |
3.1 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
HARRIS SEMICONDUCTOR
|
| NGB8206NT4 NGB8206NT4G NGB8206NG NGB8206N |
Ignition IGBT 20 A, 350 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
